FET Controlled thyristor

Details FET Controlled thyristor FET Controlled thyristor

1982-02-04

1985-02-19

James, Andrew J.

357 23, 357 43, 357 64, 357 86, H01L 2974, H01L 2978, H01L 2702, H01L 29167

Patent

active

045009023

ABSTRACT:
A thyristor has a semiconductor body with an n-emitter provided with a cathode, a p-emitter provided with an anode, and two base layers respectively adjacent thereto. Mutually contridictory requirements for great stability against unintentional ignition operations and a high degree of trigger insensitivity are met as well as possible. To this end, a connectible n(p) emitter is provided laterally adjacent the n(p) emitter, the connectible n(p) emitter forming a three layer structure together with the two base layers with a higher current transfer ratio for the charge carriers emitted thereby than the n(p) emitter. For the purpose of producing a high degree of ignition insensitivity, the connectible n(p) emitter can be selectively connected to the n(p) emitter via a semiconductor switch. The area of use encompasses ignition-sensitive thyristors having a high dU/dt load requirement.

REFERENCES:
patent: 3300694 (1967-01-01), Stehney et al.
patent: 3486088 (1969-12-01), Gray et al.
patent: 3641404 (1972-02-01), Svedberg
patent: 4060825 (1977-11-01), Schlegel
patent: 4165517 (1979-08-01), Temple et al.
patent: 4224634 (1980-09-01), Svedberg
Porst A., "Halbleiter", Siemens AG, pp. 204-209.

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