FET Controlled thyristor

Details FET Controlled thyristor FET Controlled thyristor

1982-02-04

1985-02-26

James, Andrew J.

357 234, 357 43, 357 64, 357 86, H01L 2974, H01L 2978, H01L 2702, H01L 29167

Patent

active

045020728

ABSTRACT:
A thyristor has an n-emitter provided with a cathode, a p-emitter provided with an anode, and two base layers respectively adjacent thereto. Further, an auxiliary emitter serves the purpose of internal current gain. High ignition sensitivity is strived for in addition to good stability. To this end, a connectible auxiliary emitter is provided next to the auxiliary emitter, forming a three-layer structure together with the base layers with a higher current transfer ratio for the charge carriers emitted by it than the auxiliary emitter. In order to produce a high ignition sensitivity, the connectible auxiliary emitter is conductively connected to the auxiliary emitter via a semiconductor switch. The area of employment comprises trigger-sensitive thyristors with high di/dt and dU/dt stability.

REFERENCES:
patent: 3300694 (1967-01-01), Stehney et al.
patent: 3486088 (1969-12-01), Gray et al.
patent: 3526815 (1970-09-01), Svedberg et al.
patent: 3641404 (1972-02-01), Svedberg
patent: 4060825 (1977-11-01), Schlegel
patent: 4165517 (1979-08-01), Temple et al.
patent: 4224634 (1980-09-01), Svedberg
Hoffman, A. et al, "Thyristor Handbuch", 1965, Siemens-Schuckertwerke AG, pp. 27-28.

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