FET Controlled thyristor

Details FET Controlled thyristor FET Controlled thyristor

1982-01-29

1985-02-26

James, Andrew J.

357 234, 357 43, 357 64, 357 86, H01L 2974, H01L 2978, H01L 2702, H01L 29167

Patent

active

045020710

ABSTRACT:
A thyristor has a pair of opposite conductivity bases between and respectively adjacent to opposite conductivity emitters. An auxiliary emitter serves for internal current gain and is provided with an auxiliary emitter cathode. In order to meet the mutually-contradictory requirements for great stability against unintentional trigger operations and a high trigger sensitivity, the auxiliary emitter electrode is connected by way of a semiconductor switch to the base layer adjacent the auxiliary emitter for increasing the trigger sensitivity. The thyristor may be employed in situations in which a high di/dt stability and a high dU/dt stability is desired.

REFERENCES:
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4165517 (1979-08-01), Temple et al.
patent: 4224634 (1980-09-01), Svedberg
Hoffmann, A., et al., "Thyristor-Handbuch", Siemens-Schuckertwerke AG, 1965, pp. 27-28.

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