1981-06-22
1985-02-26
James, Andrew J.
357 43, 357 234, H01L 2974, H01L 2702, H01L 2978
Patent
active
045020701
ABSTRACT:
Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivity type; also containing a third zone of the first conductivity type and a fourth zone of the second conductivity type; and further containing an MIS-FET integrated into the semiconductor body and having a source zone of the first conductivity type embedded in coplanar relationship in a zone of the second conductivity type; an insulating layer disposed on the surface of the semiconductor body, a control electrode lying on the insulating layer and covering a first channel zone operatively associated with the FET; and a cathode electrode on the semiconductor body, including the features that the zone of the second conductivity type of the MIS-FET is embedded in the third zone in coplanar relationship therewith and forms the first channel zone at the surface of the semiconductor body; the second zone of the thyristor structure is embedded in the third zone in coplanar relationship therewith and forms a second channel zone at the surface of the semiconductor body; the third zone extends to the surface of the semiconductor body between the two channel zones; the control electrode also covers the second channel zone and the part of the third zone extending to the surface of the semiconductor body; and the cathode electrode is in contact with the source zone of the MIS-FET.
REFERENCES:
patent: 3697830 (1972-10-01), Dale
patent: 4223328 (1980-09-01), Terasawa et al.
patent: 4364073 (1982-12-01), Becke et al.
Leipold Ludwig
Stengl Jens P.
Tihanyi Jeno
Greenberg Laurence A.
James Andrew J.
Lamont John
Lerner Herbert L.
Siemens Aktiengesellschaft
LandOfFree
FET Controlled thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with FET Controlled thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FET Controlled thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-519089