Fet charge sensor and voltage probe

Details Fet charge sensor and voltage probe Fet charge sensor and voltage probe

1984-08-16

1986-08-12

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 2312, 357 29, 357 52, 357 30, 250338, 250370, H01L 2978, H01L 2714

Patent

active

046059466

ABSTRACT:
A MOSFET structure having a biased gate covered with an insulator of such a thickness as to render the structure capable of giving a measure of accumulated charge and usable in a stacked structure as a particle spectrometer.

REFERENCES:
patent: 3742215 (1973-06-01), Mueleman
patent: 4251829 (1981-02-01), Adam
patent: 4276095 (1981-06-01), Beilstein, Jr. et al.
patent: 4307411 (1981-12-01), Carnes et al.
patent: 4356040 (1982-10-01), Fu et al.
patent: 4420871 (1983-12-01), Scheibe
patent: 4472729 (1984-09-01), Shibata et al.
patent: 4505024 (1985-03-01), Kawata et al.
patent: 4511799 (1985-04-01), Bjorkholm
patent: 4529884 (1985-07-01), Wolicki et al.

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