FET-bipolar drive circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307280, 307300, 307315, H03K 1760, H03K 1908, H03K 333

Patent

active

045903956

ABSTRACT:
The present invention provides a low-cost switching system that allows very high speed ON and OFF switching of a bipolar power transistor. The switching system of the present invention consists of an FET-bipolar transistor combination which unites the advantages of FET and bipolar power transistors for extremely fast switching applications. The system draws negligible steady-state drive power and still turns the bipolar transistor fast ON and fast OFF.

REFERENCES:
patent: 2989652 (1961-06-01), Hall
patent: 4367421 (1983-01-01), Baker
Carpenter, et al.; "A New Universal Proportional Drive Technique for High Voltage Switching Transistors", Proceeding of Powercon 8, Power Concepts Inc., 1981, pp. 1-15.
Gregorich, et al.; "Designing Switched-Mode Converters with a New Proportional Base Drive Technique", Digital Equipment Corp., Maynard, Mass., pp. E2-1,-E2-8.
Farrow, et al.; "A 300K Hz Off-Line Switching Supply Using a Unique Bi-Mos Switch Combination", Power Conversion International, pp. 20-27, 1980.
Barlage; "A New Switched-Mode Converter Technique Combines VMOS and Bipolar", Woodward Governor Co. pp. D2-1,-D2-8.

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