Fet and bipolar device and circuit process with maximum junction

Details Fet and bipolar device and circuit process with maximum junction Fet and bipolar device and circuit process with maximum junction

1974-06-26

1976-02-10

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

148175, 357 49, 29577, B01J 1700

Patent

active

039369293

ABSTRACT:
Disclosed are improved field-effect and bipolar semiconductor devices and the method of making them, wherein maximum junction control provides highly predictable device parameters. Low temperature epitaxial depositions provide tight junction thickness and resistivity control, and an orientation dependent etch forms grooves circumscribing portions of the host substrate and overlying epitaxial layers to provide dielectrically isolated single crystalline mesas utilized in forming electronic devices.

REFERENCES:
patent: 3404450 (1968-10-01), Karcher
patent: 3696274 (1972-10-01), Davis
patent: 3786560 (1974-01-01), Cunningham

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