FET amplifier with temperature-compensating circuit

Details FET amplifier with temperature-compensating circuit FET amplifier with temperature-compensating circuit

2005-06-14

2005-06-14

Mottola, Steven J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C330S289000

Reexamination Certificate

active

06906590

ABSTRACT:
A FET amplifier which minimizes the worsening of the distortion-susceptibility due to variations in the ambient temperature of operation is to be provided. An LDMOS FET1, whose source terminal is grounded and to which are applied a gate voltage Vgs from a gate bias terminal3via a temperature-compensating circuit2and a choke coil and a drain voltage Vds from a drain bias terminal4via a choke coil operates as a source-grounded type amplifier. In the temperature compensating circuit2, the resistances of fixed resistance elements21and22connected in parallel are set to be the same or have the same number of digits, and those of thermosensitive resistance elements (thermistors)23and24are set to be a combination of a value greater by one digit and a value smaller by one digit than that of the fixed resistance element21or the fixed resistance element22at the standard level (+25° C.) in the ambient temperature range of operation.

REFERENCES:
patent: 5506544 (1996-04-01), Staudinger et al.
patent: 6548840 (2003-04-01), Pobanz et al.
patent: 57-157606 (1982-09-01), None
patent: 4-317205 (1992-11-01), None

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