Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1978-07-28
1979-05-01
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330296, 330302, H03F 316
Patent
active
041526660
ABSTRACT:
In an FET amplifier comprising a series connection of a coaxial-to-waveguide converter and a circulator for supplying an FET with an input signal of a wide microwave band, such as an octave band between about 1 GHz and 12 GHz, a d.c. bias voltage is applied to the FET through the circulator from a terminator therefor. For this purpose, the terminator comprises an inner and an outer conductor insulated ohmically from each other and shunted for the microwave band, as by a capacitor of several picofarads. Preferably, a resistor and a third conductor are successively connected to the inner conductor with the capacitor placed at an end of the resistor remoter from the inner conductor and with a dummy for the input signal positioned between the outer and the third conductors.
REFERENCES:
patent: 4011518 (1977-03-01), Irvine et al.
Akinaga Wakoto
Fukuda Sachiro
Kajikawa Mitsugi
Mullins James B.
Nippon Electric Co. Ltd.
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