Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1986-10-29
1988-06-14
Wan, Gene
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330294, 330298, H03F 316, H02H 720
Patent
active
047514736
ABSTRACT:
An FET amplifier circuit is provided capable of minimizing the phase change of signals which pass through the circuit. Further, an FET amplifier circuit is provided capable of protecting the circuit against the effects of over-amplitude input signals with the phase change minimized.
REFERENCES:
patent: 4420724 (1983-12-01), Owen
Tajima, Yusuke et al., "Design of Broad Band Power GaAs FET" IEEE Trans. on Microwave Theory and Techniques, vol. MTT-32, No. 2, Mar. 1984, pp. 261-267.
Aubert, D. et al., "Channel & Power Amplifiers for Communications Sattellite Applications", Microwave Systems Applications Technology Conference Proceedings, Mar. 8-10, 1983, pp. 269-307.
Mitsubishi Denki & Kabushiki Kaisha
Wan Gene
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