FET amplifier

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357 15, 357 68, H01L 2980

Patent

active

046085831

ABSTRACT:
High power operation of an amplifier is more easily achieved in the 15 GHz and higher portion of the radio frequency spectrum by utilizing transmission line techniques to form the elements of the amplifier. Source, drain and gate members are arranged as elements of a radio frequency transmission line on a doped, semiconductor surface. When properly biased, the device operates as an amplifier.

REFERENCES:
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4160259 (1979-07-01), Nishizawa
patent: 4459556 (1984-07-01), Nanbu et al.
"Wave-Theoretical Analysis of Signal Propagation on FET Electrodes," W. Heinrich et al; Electronic Letters, 20 Jan. 1983, vol. 19, No. 2, pp. 65-67.
"Novel Design of Travelling Wave FET", CE-Jun Wei (Mar. 24, 1983), Electronics Letters, 6/23/83, pp. 461-463.

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