Ferromagnetic tunnel magnetoresistive devices and magnetic head

Details Ferromagnetic tunnel magnetoresistive devices and magnetic head Ferromagnetic tunnel magnetoresistive devices and magnetic head

2006-08-29

2006-08-29

Chen, Tianjie (Department: 2656)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07099126

ABSTRACT:
The present invention provides a ferromagnetic tunnel magnetoresistive film which is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage V1applied to one of the tunnel junctions. By employing half-metallic ferromagnets11and12in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

REFERENCES:
patent: 5378885 (1995-01-01), Jones et al.
patent: 6185079 (2001-02-01), Gill
patent: 6191925 (2001-02-01), Watson
patent: 6259586 (2001-07-01), Gill
patent: 6469873 (2002-10-01), Maruyama et al.
patent: 6771472 (2004-08-01), Mao et al.
patent: 6819530 (2004-11-01), Gill
patent: 6934133 (2005-08-01), Hayakawa et al.
patent: 2003/0214762 (2003-11-01), Sharma et al.
patent: 2000332317 (2000-11-01), None

Affiliated with

Also associated with

Rating

Ferromagnetic tunnel magnetoresistive devices and magnetic head does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferromagnetic tunnel magnetoresistive devices and magnetic head, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferromagnetic tunnel magnetoresistive devices and magnetic head will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3620417