Ferromagnetic tunnel magnetoresistive devices and magnetic head

Details Ferromagnetic tunnel magnetoresistive devices and magnetic head Ferromagnetic tunnel magnetoresistive devices and magnetic head

2006-04-18

2006-04-18

Chen, Tianjie (Department: 2656)

Dynamic magnetic information storage or retrieval

Head

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Reexamination Certificate

active

07031111

ABSTRACT:
A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

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