Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1997-09-19
1999-01-19
Heinz, A. J.
Dynamic magnetic information storage or retrieval
Head
Hall effect
257421, 365158, G11B 539, G11C 1100, H01L 4112
Patent
active
058620222
ABSTRACT:
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
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patent: 5729410 (1998-03-01), Fontana
T. Miyazaki, et al., "Giant Magnetic Tunneling Effect In Fe/A1.sub.2 O.sub.3 /Fe Junction", Journal of Magnetism and Magnetic Materials 139 (1995), pp. 231-234.
M. Pomerantz, et al., "Strongly Coupled Ferromagnetic Resonances of Fe Films", Journal of Applied Physics, vol. 61, No. 8, Apr. 15, 1987, pp. 3747-3749.
S. Maekawa, et al., "Electron Tunneling Between Ferromagnetic Films", IEEE Transactions on Magnetics, vol. MAG-18, No. 2, Mar. 1982, pp. 707-708.
Araki Satoru
Noguchi Kiyoshi
Ohta Manabu
Oike Taro
Sano Masashi
Heinz A. J.
TDK Corporation
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