Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie

Details Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie

1998-03-24

1999-11-16

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

257421, 365158, G11B 539

Patent

active

059868589

ABSTRACT:
A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation barrier layer, wherein the insulation barrier layer includes a metal layer carrying the tunnel oxide film thereon such that the tunnel oxide film is formed of an oxide of a metal element constituting the metal layer, and wherein the insulation barrier layer has a thickness of about 1.7 nm or less but larger than 1 molecular layer in terms of the oxide forming the tunnel oxide film.

REFERENCES:
patent: 5862022 (1999-01-01), Noguchi
Journal of Applied Physics, vol. 79, Apr. 15, 1996, pp. 4724-4729, J. Moodera & L. Kinder, "Ferromagnetic-insulator-ferromagnetic tunneling: spin-dependent tunneling and large magnetoresistance in trilayer junction" .

Affiliated with

Also associated with

Rating

Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferromagnetic tunnel-junction magnetic sensor utilizing a barrie will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1332082