Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-10-25
2008-12-16
Klimowicz, William J (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C257S421000, C365S173000
Reexamination Certificate
active
07466526
ABSTRACT:
A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
REFERENCES:
patent: 5986858 (1999-11-01), Sato et al.
patent: 6806804 (2004-10-01), Saito et al.
patent: 6818458 (2004-11-01), Gill
patent: 6831314 (2004-12-01), Higo et al.
patent: 7045841 (2006-05-01), Hong et al.
patent: 7227773 (2007-06-01), Nguyen et al.
patent: 7333306 (2008-02-01), Zhao et al.
patent: 2004/0085688 (2004-05-01), Pinarbasi
patent: 2004/0257717 (2004-12-01), Sharma et al.
patent: 2004/0257719 (2004-12-01), Ohba et al.
patent: 2005/0057863 (2005-03-01), Horng et al.
patent: 2005/0110004 (2005-05-01), Parkin et al.
patent: 2006/0061915 (2006-03-01), Zhang et al.
patent: 2007/0015293 (2007-01-01), Wang et al.
patent: 2007/0268632 (2007-11-01), Jogo et al.
patent: 1 193 694 (2002-04-01), None
patent: 1 478 936 (2003-08-01), None
patent: 2871670 (1999-01-01), None
patent: 2001006126 (2001-01-01), None
patent: 2001-068760 (2001-03-01), None
patent: 2002-204004 (2002-07-01), None
patent: 2004031694 (2004-01-01), None
patent: WO 2004-021372 (2004-03-01), None
Shinji Yuasa et al.; “Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions”, Nature Materials, vol. 3, 2004, pp. 868-871. Cited in the spec.
Stuart S. P. Parkin et al.; “Giant tunneling magnetoresistance at room temperature with MgO (100) tunnel barriers”, Nature Materials, vol. 3, 2004, pp. 862-867. Cited in the spec.
K. Tsunekawa et al.; “Effect of capping layer material on tunnel magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions”, manuscripts of Intermag 2005, Session No. HP-8, Apr. 4, 2005. Cited in the spec.
European Search Report dated Aug. 4, 2006.
H. L. Meyerheim, et al., “Geometrical and Compositional Structure at Metal-Oxide Interfaces: MgO on Fe(001)”, Physical Review Letters, 2001 The American Physical Society, vol. 87, No. 7, Aug. 13, 2001, pp. 1-4.
Ashida Hiroshi
Kobayashi Kazuo
Sato Masashige
Umehara Shinjiro
Fujitsu Limited
Klimowicz William J
Westerman, Hattori, Daniels & Adrian , LLP.
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