Ferromagnetic thin films

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428642, 428649, 428688, 428689, 428692, 428693, 428694R, 428697, 428699, 428212, 427502, 427548, 427549, 365 66, 365173, 365158, 117105, 117939, 117954, B32B 702, B32B 900, B32B 1900, G11C 1100

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053744721

ABSTRACT:
A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

REFERENCES:
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patent: 3965463 (1976-06-01), Chaudhari et al.
patent: 4968564 (1990-11-01), Tada et al.
patent: 5169485 (1992-12-01), Allen, Jr. et al.
Sands et al., "Epitaxial Ferromagnetic .tau.-MnAl Films on GaAs", Appl. Phys. Lett. 57(24), Dec. 10, 1990, pp. 2609-2611.
Bither et al. "Magnetic Tetragonal .delta. Phase in the Mn-Ga Binary", J. Appl. Phys. 36, (1965), pp. 1501-1502.
Cheeks et al. "Magnetic and Magneto-Optic Properties of Epitaxial Ferromagnetic .tau.-MnAl/(Al,Ga)As Heterostructures", Appl. Phys. lett. 60 (11), Mar. 16, 1992, pp. 1393-1395.

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