Ferromagnetic gate memory

Details Ferromagnetic gate memory Ferromagnetic gate memory

1987-07-23

1989-05-16

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 365171, H01L 2722, H01L 2982, H01L 2996, H01L 4300

Patent

active

048314277

ABSTRACT:
A memory cell (10) comprises a ferromagnetic gate (12) disposed above a source (18) and a drain (20) in a substrate (16). A magnetic field is created in the ferromagnetic gate (12) by producing a large current between the source (18 ) and drain (20). The orientation of the magnetic field will depend upon the direction of the current flow. To read information from the memory cell (10), a small current is passed from source (18) to drain (20); if the electrons (25) are deflected upwards towards the surface (24) of the substrate (16), a lesser current will result than if the electrons (25) are deflected downward towards the bottom of the channel (22). Hence, the magnetic orientation, and therefore the information stored within the memory cell (10), can be determined by the amount of current detected.

REFERENCES:
patent: 4607271 (1986-08-01), Popovic et al.
Sax, N. et al., Hawley's Condensed Chemical Dictionary, 11th Ed., Van Nostrand, 1987, p. 889.

Affiliated with

Also associated with

Rating

Ferromagnetic gate memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferromagnetic gate memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferromagnetic gate memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2327113