Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-06-13
2006-06-13
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000
Reexamination Certificate
active
07061007
ABSTRACT:
Phase transition is controlled by controlling fractal dimension of a fractal-coupled structure overall or locally. For a magnetic material, ferromagnetic phase transition temperature of magnetic particles arranged to have self-similarity is controlled by fractal dimension. For a half-filled electron system confined in a treelike fractal, Mott transition is controlled by fractal dimension of the system. Stronger quantum chaos than conventional ones is generated by adding magnetic impurities to the fractal-coupled structure, and through this process, Anderson transition is controlled.
REFERENCES:
patent: 3696346 (1972-10-01), Zook
patent: 5296716 (1994-03-01), Ovshinsky et al.
GA. Niklasson, Fractal dimension of gas evaporated Co Aggregates Physical Review letter ( Apr. 25, 1988) p. 1735-1740.
Ugajin, R. et al., “Anderson Transition Driven By Running Fractal Dimensions In A Fractal-Shaped Structure,”Physica—A Statistical Mechanical And Its Applications, Apr. 15, 2000, vol. 278, No. 3-4, pp. 312-326.
Ugajin, R. et al, “Growth Model Of Coupled-Fractal Networks,”American Institiute Of Physics, Mar. 20, 2000, vol. 76, No. 12, pp. 1624-1626.
Kuroki Yoshihiko
Ugajin Ryuichi
Ukita Masakazu
Nelms David
Nguyen Thinh T
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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