Ferroelectrics epitaxially grown on superconducting substrates

Details Ferroelectrics epitaxially grown on superconducting substrates Ferroelectrics epitaxially grown on superconducting substrates

1990-11-20

1992-12-01

Griffin, Donald A.

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

361321, 29 2542, H01G 410, H01G 700

Patent

active

051684209

ABSTRACT:
A ferroelectric storage element and its method of growth. A thin ferroelectric film, for example, of bismuth titanate, is epitaxially grown on a perovskite crystalline substrate of thin film that is superconductive at some temperature. For example, the thin film may be YBa.sub.2 Cu.sub.3 O.sub.7-x, Bi.sub.2 Sr.sub.2 CuO.sub.6+x, or Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x.

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