Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-02-08
2005-02-08
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S396000, C438S399000, C438S239000, C438S240000, C438S238000, C438S199000
Reexamination Certificate
active
06852549
ABSTRACT:
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.
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Chen San-Yuan
Chin Albert
Sun Chia-Liang
Anya Igwe U.
National Chiao Tung University
Smith Matthew
Webb Ziesenheim & Logsdon Orkin & Hanson, P.C.
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