Ferroelectric thin film material, method of deposition, and devi

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

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357 51, 361321CC, 365145, H01L 2968, H01L 2702, H01G 410

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active

051462990

ABSTRACT:
A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.

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