Ferroelectric thin film manufacturing method, ferroelectric...

Details Ferroelectric thin film manufacturing method, ferroelectric... Ferroelectric thin film manufacturing method, ferroelectric...

2007-01-16

2007-01-16

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S003000, C438S508000, C438S464000, C438S508000, C438S745000

Reexamination Certificate

active

10803479

ABSTRACT:
A ferroelectric element manufacturing method includes the steps of forming a buffer layer, which also functions as a sacrificial layer, on a single crystal substrate, forming a ferroelectric film on the buffer layer, separating the ferroelectric film and the single crystal substrate, and arranging the ferroelectric film that was separated from the single crystal substrate on an optional substrate.

REFERENCES:
patent: 5527766 (1996-06-01), Eddy
patent: 6677629 (2004-01-01), Fischer et al.
patent: 2001-107238 (2001-04-01), None
patent: 2001-196892 (2001-07-01), None
patent: 2002-076294 (2002-03-01), None
patent: 2003-017981 (2003-01-01), None

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