Ferroelectric thin film formation composition, ferroelectric...

Compositions: coating or plastic – Coating or plastic compositions – Silicon containing other than solely as silicon dioxide or...

Reexamination Certificate

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C106S287100, C106S287110, C106S287160, C106S287180, C106S287190, C427S100000, C427S126300, C427S380000, C427S384000

Reexamination Certificate

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07553364

ABSTRACT:
Provided are a ferroelectric thin film formation composition, a ferroelectric thin film and a method of fabricating a ferroelectric thin film, the ferroelectric thin film formation composition being capable of effectively preventing occurrence of a striation and expanding the range of choice of a sol composition. A ferroelectric thin film formation composition containing a metal compound that is a material to form a ferroelectric thin film contains a hydrophobic compound which includes a reactive group reacting with a hydroxy group and in which at least an end side of a remnant exclusive of the reactive group has a hydrophobic property. Thus, it is possible to expand the range of choice of the sol composition while effectively suppressing occurrence of the striation.

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patent: 5397823 (1995-03-01), Torikoshi
patent: 2001/0022990 (2001-09-01), Sato et al.
patent: 2003/0000422 (2003-01-01), Hase et al.
patent: 1267654 (2000-09-01), None
patent: 2001-48540 (2001-02-01), None
patent: 2001-72418 (2001-03-01), None
patent: 2001-213624 (2001-08-01), None

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