Ferroelectric thin film, electric device and method for preparin

Details Ferroelectric thin film, electric device and method for preparin Ferroelectric thin film, electric device and method for preparin

1997-05-13

1999-07-06

King, Roy V.

Coating processes

Electrical product produced

Metallic compound coating

4271261, 117109, C23C 1424

Patent

active

059195150

ABSTRACT:
On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

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Hiroshi Maiwa et al, "Crystalline Structure of PbTi0.sub.3 Thin Films by Multiple Cathode Sputtering", Jpn. J. Appll Phys. vol. 31 (1992) pp. 3029-3032, Part 1, No. 9B, Sep. 1992.
Takashi Hase et al, Pb(Zr, Ti0)0.sub.3 Thin Films by Multitarget Sputtering, Jpn. J. Appl Phys. vol. 33 (1994) pp. 5244-5248, Part 1, No. 9b, Sep. 1994.
Jiyoung Kim et al, "Ultra-Thin Sputtered PZT Films for ULSI Drams", Mat. Res. Soc. Sympo. Proc., 310 (1993) pp. 473-478.
Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Grup III: Crystal and Solid State Physics, volume 16, Revised, Updated and Extended Edition of Volumes III/3 and III/9, Ferroelectrics and Related Substances, Subvolume A: Oxides, (1981), pp. 1-43).

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