Ferroelectric thin film, electric device, and method for prepari

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428450, 428469, 428472, 428701, B32B 1700

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059552131

ABSTRACT:
On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

REFERENCES:
Takashi Nakamura, Yuichi Nakao, Kazuhiro Hoshiba, Katsumi Samashima, Akira Kamisawa and Hidemi Takasu, "Study of Ferroelectric Thin Films for Application to DNRO Nonvolatile Memories", Technical Report of IEICE. SDM93-130, Nov., 1993.
Hiroshi Maiwa, Noboru Ichinose and Kiyoshi Okazake, "Crystalline Structure of PbTiO.sub.3 Thin Films by Multiple Cathode Sputtering", Jpn. J. Appl. Phys. vol. 31 (1992) pp. 3029-3032, Part 1, No. 98, Sep. 1992.
Takashi Hase, Kazuo Hirata, Kazushi Amanuma, Naokichi Hosokawa and Yoichi Miyasaka, "Preparation of Pb(Zr, Ti)O.sub.3 Thin Films by Multitarget Sputtering", Jpn. J. Appl. Phys. vol. 33 (1994) pp. 5244-5248, Part 1, No. 98, Sep. 1994.
Jiyoung Kim, C. Sudhama, Rajesh Khamankar and Jack Lee, "Ultra-Thin Sputtered PZT Films For ULSI Drams", Mat. Res. Soc. Sympo. Proc., 310 (1993) pp. 473-478.
Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Group III: Crystal and Solid State Physics, vol. 16, Revised, Updated and Extended Edition of vols. III/3 and III/9, Ferroelectrics and Related Substances, Subvolume a: Oxides, (1981), pp. 1-43.

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