Ferroelectric thin film device and method for making the same

Details Ferroelectric thin film device and method for making the same Ferroelectric thin film device and method for making the same

1996-04-29

1998-10-06

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H10L 2100

Patent

active

058175326

ABSTRACT:
There are disclosed a ferroelectric thin film device and a method for making the same. The ferroelectric thin film device includes a bottom electrode formed on a substrate, a ferroelectric thin film formed on the bottom electrode to contain a predetermined amount of Ta and have grains arranged in a regularly repeating pattern, and a top electrode formed on the ferroelectric thin film. The method for making a ferroelectric thin film includes the steps of forming a bottom electrode on a substrate, forming on the bottom electrode a Ta doped ferroelectric thin film, forming a top electrode on the ferroelectric thin film at regular intervals, and performing a rapid thermal annealing process on the ferroelectric thin film, using a radiant heating device, to induce crystallization.

REFERENCES:
patent: 5374578 (1994-12-01), Patel et al.
patent: 5391393 (1995-02-01), Maniar
patent: 5578846 (1996-11-01), Evans, Jr. et al.
patent: 5583068 (1996-12-01), Jones, Jr. et al.

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