Ferroelectric thin-film capacitor

Details Ferroelectric thin-film capacitor Ferroelectric thin-film capacitor

1997-05-05

1999-10-26

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 257295, 252520, H01G 406

Patent

active

059739118

ABSTRACT:
A method for making a ferroelectric thin film capacitor. A Ti adhesive layer is formed on a silicon substrate covered with a silicon oxide layer. On this, a Pt film is deposited as a lower capacitor electrode, over which a ferroelectric film of high permittivity, such a crystallized BST film, is deposited by sputtering. Then an upper Pt electrode is deposited over the BST film by sputtering to form a capacitor. Finally, the capacitor is heat-treated in an oxidizing atmosphere to eliminate any leakage holes, that cause leakage current, in the ferroelectric thin film caused by the sputtering.

REFERENCES:
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5443030 (1995-08-01), Ishihara et al.
patent: 5512538 (1996-04-01), Den et al.
patent: 5548475 (1996-08-01), Ushikubo et al.

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