Ferroelectric thin film and method of manufacturing the same

Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition

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136238, 136239, 501134, 501135, 501136, H01L 3522, C04B 35472, C04B 35491

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057171572

ABSTRACT:
A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

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