Ferroelectric semiconductor device and method of manufacture

Details Ferroelectric semiconductor device and method of manufacture Ferroelectric semiconductor device and method of manufacture

1996-11-07

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438305, H01L 2100, H01L 21336

Patent

active

058518444

ABSTRACT:
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (15) of ferroelectric material disposed on a semiconductor substrate (11) and a gate structure (27) formed on the semiconductor substrate (11). A source region (23) and a drain region (24) are formed on the semiconductor substrate such that the source region (23) and the drain region (24) are laterally spaced apart from the gate structure (27).

REFERENCES:
patent: 3808674 (1974-05-01), Francombe et al.
patent: 5146299 (1992-09-01), Lamp et al.
patent: 5361225 (1994-11-01), Ozawa
patent: 5424238 (1995-06-01), Sameshina

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