Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-05-04
2008-03-18
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S253000, C438S623000, C438S624000, C438S669000
Reexamination Certificate
active
07344897
ABSTRACT:
A ferroelectric polymer memory device and its method of formation are disclosed. In accordance with one embodiment, lower electrode memory device portions are formed using a damascene patterning process and upper electrode memory device portions are formed using a subtractive patterning process.
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Diana Daniel C.
Duran Carolyn R.
Lindstedt Robert C.
Silberstein Marian E.
Au Bac H.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Wilczewski M.
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