Ferroelectric polymer memory structure and method therefor

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S253000, C438S623000, C438S624000, C438S669000

Reexamination Certificate

active

07344897

ABSTRACT:
A ferroelectric polymer memory device and its method of formation are disclosed. In accordance with one embodiment, lower electrode memory device portions are formed using a damascene patterning process and upper electrode memory device portions are formed using a subtractive patterning process.

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