Ferroelectric passive memory cell, device and method of...

Details Ferroelectric passive memory cell, device and method of... Ferroelectric passive memory cell, device and method of...

2011-04-12

2011-04-12

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S099000, C438S100000, C438S288000, C438S393000, C257SE21090, C257SE21104, C257SE21663, C257SE21664

Reexamination Certificate

active

07923264

ABSTRACT:
A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.

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