Ferroelectric oxide artificial lattice, method for...

Details Ferroelectric oxide artificial lattice, method for... Ferroelectric oxide artificial lattice, method for...

2006-05-26

2010-06-22

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S759000, C257S760000

Reexamination Certificate

active

07741633

ABSTRACT:
The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.

REFERENCES:
patent: 6747357 (2004-06-01), Lee et al.
patent: 1020030070295 (2003-03-01), None
patent: 1020030070295 (2003-08-01), None
Cho, Yasuo et al, “Realization of 10 Tbit/in.2 memory density and subnanosecond domain switching time in ferroelectric data storage”, Applied Physics Letters, Dec. 2, 2005.
Paurch, P. et al, “Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr 0.2Ti0.8)O3 thin films”, Applied Physics Letters, Jul. 23, 2001, pp. 530-532.

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