Ferroelectric memory device without a separate cell plate line a

Details Ferroelectric memory device without a separate cell plate line a Ferroelectric memory device without a separate cell plate line a

1998-10-20

2000-06-06

Nelms, David

Static information storage and retrieval

Interconnection arrangements

Ferroelectric

365 65, 365145, 365149, G11C 506

Patent

active

06072711&

ABSTRACT:
A ferroelectric memory device, e.g., nonvolatile, has an effective layout by eliminating a separate cell plate line. The ferroelectric memory device includes first and second split word lines formed over first and second active regions of a semiconductor substrate, and the first and second active regions are isolated from each other. Source and drain regions are formed in the first active region on both sides of the first split word line and the second active region on both sides of the second split word line. A conductive barrier layer, a first capacitor electrode and a ferroelectric layer are sequentially formed on the first and second split word lines. Two second capacitor electrodes with one connected to one of the source and drain regions of the second active region is formed over the first split word line. The other one is connected to one of the source and drain regions of the first active region and is formed over the second split word line. First and second bit lines are respectively connected to the other one of the source and drain regions of the first active region, and the other one of the source and drain regions of the second active region.

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