Ferroelectric memory device with a conductive polymer layer...

Details Ferroelectric memory device with a conductive polymer layer... Ferroelectric memory device with a conductive polymer layer...

2005-10-04

2005-10-04

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S099000, C438S128000, C438S623000, C438S745000, C438S780000, 27, 27

Reexamination Certificate

active

06951764

ABSTRACT:
A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.

REFERENCES:
patent: 2003/0224535 (2003-12-01), Andideh et al.

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