Ferroelectric memory device and method of manufacturing the...

Details Ferroelectric memory device and method of manufacturing the... Ferroelectric memory device and method of manufacturing the...

2008-02-13

2011-11-29

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000

Reexamination Certificate

active

08067250

ABSTRACT:
A method of manufacturing a ferroelectric memory device includes: forming a hydrogen barrier film which covers a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, wherein a thickness of an area of the hydrogen barrier film provided on the upper electrode is made greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor by forming the area of the hydrogen barrier film provided on the upper electrode in a plurality of layers.

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