Ferroelectric memory device and electronic apparatus

Details Ferroelectric memory device and electronic apparatus Ferroelectric memory device and electronic apparatus

2007-04-10

2007-04-10

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Addressing

Sync/clocking

C365S189040, C365S065000, C365S117000, C365S145000

Reexamination Certificate

active

11170682

ABSTRACT:
A ferroelectric memory device characterized in comprising: a voltage source for generating a predetermined voltage; a first bit line and a second bit line; a first ferroelectric capacitor having one end electrically connected to the first bit line; a first resistance provided between the first bit line and the voltage source; a second ferroelectric capacitor having one end electrically connected to the second bit line; a second resistance provided between the second bit line and the voltage source; and a sense amplifier that judges data written in the first ferroelectric capacitor based on a potential on the first bit line, according to a timing at which a potential on the second bit line changes when the predetermined voltage is supplied to the first bit line and the second bit line.

REFERENCES:
patent: 2876436 (1959-03-01), Anderson
patent: 5038323 (1991-08-01), Schwee
patent: 5677865 (1997-10-01), Seyyedy
patent: 5721699 (1998-02-01), DeVilbiss
patent: 5926412 (1999-07-01), Evans et al.
patent: 2005/0122818 (2005-06-01), Yamamura
patent: 2006/0013033 (2006-01-01), Yamamura
patent: 2002-100183 (2002-04-01), None
patent: 2003-242772 (2003-08-01), None
patent: 2005-141833 (2005-06-01), None
English machine translation of JP2003-242772 retreived from PAJ.

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