Ferroelectric memory cell with shunted ferroelectric capacitor a

Details Ferroelectric memory cell with shunted ferroelectric capacitor a Ferroelectric memory cell with shunted ferroelectric capacitor a

1997-09-15

1999-09-28

Nguyen, Viet Q.

Static information storage and retrieval

Radiant energy

Ferroelectric

365145, 365203, G11C 1300

Patent

active

059598786

ABSTRACT:
A ferroelectric memory includes a transistor having a source/drain, a capacitor having a first electrode and a second electrode, and a plate line connected to the second electrode. The first electrode is connected to the source/drain of the transistor to create a node that is isolated when the transistor is off. A shunt system directly electrically connects the isolated node and the second electrode of said capacitor at a predetermined time to essentially equalize the voltages on the first and second electrodes of said capacitor during the predetermined time. In different embodiments the shunt is a Schottky diode, a resistor, and a pair of back-to-back diodes and a transistor. In the embodiment in which the shunt is a transistor, the shunt line connected to the shunt transistor gate is boosted, there is a shunt transistor connecting each isolated node in a portion of the memory, to the adjacent isolated node, and every eight to thirty-two isolated nodes, another shunt transistor connects the chain of isolated nodes to the plate line.

REFERENCES:
patent: 4712876 (1987-12-01), Umeda et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5038323 (1991-08-01), Schwee
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5121353 (1992-06-01), Natori
patent: 5224069 (1993-06-01), Natori
patent: 5307304 (1994-04-01), Saito et al.
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5539279 (1996-07-01), Takeuchi et al.
patent: 5598366 (1997-01-01), Kraus et al.
patent: 5663904 (1997-09-01), Arase
patent: 5798964 (1998-08-01), Shimizu et al.
Takashima et al.; High-Density Chain Ferroelectric Random-Access Memory (CFRAM); Jun. 11-14, 1997; pp. 83-84.
Sumi et al.; "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns"; Feb. 18, 1994; ISSCC94/ Session 16/ Technology Directions: Memory, Packaging/Paper FA 16.2; 1994 IEEE International Solid-State Circuits Conference.
Koike et al.; "A 60-ns 1-Mb Nonvolatile Ferroelectric Memory with Non-Driven Cell Plate Line Write/Read Scheme"; Session and Paper No. 23.1.

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