Ferroelectric memory and method in which polarity of domain...

Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium

Reexamination Certificate

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Reexamination Certificate

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08068405

ABSTRACT:
Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.

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