Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-08-28
2007-08-28
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000, C257SE21664, C257SE27104
Reexamination Certificate
active
11226728
ABSTRACT:
A method for manufacturing a ferroelectric memory includes: (a) forming first and second contact sections on a first dielectric layer formed above a base substrate; (b) forming a laminated body having a lower electrode, a ferroelectric layer and an upper electrode successively laminated; (c) forming a conductive hard mask above the laminated body and etching an area of the laminated body exposed through the hard mask, to thereby form a ferroelectric capacitor above the first contact section; (d) forming above the first dielectric layer a second dielectric layer that covers the hard mask, the ferroelectric capacitor and the second contact section; (e) forming a contact hole in the second dielectric layer which exposes the second contact section; (f) providing a conductive layer in an area including the contact hole for forming a third contact section; and (g) polishing the conductive layer and the second dielectric layer until the hard mask above the ferroelectric capacitor is exposed.
REFERENCES:
patent: 4252421 (1981-02-01), Foley, Jr.
patent: 6841396 (2005-01-01), Celii et al.
patent: 2003/0119211 (2003-06-01), Summerfelt et al.
patent: 2004/0042134 (2004-03-01), Kim et al.
patent: 2004/0166629 (2004-08-01), Hilliger et al.
patent: 2004/0191930 (2004-09-01), Son et al.
patent: 2005/0181605 (2005-08-01), Ozaki et al.
patent: 2002-033459 (2002-01-01), None
patent: 2004-335536 (2004-11-01), None
Fukada Shinichi
Matsuki Hiroshi
Mitsui Hiroyuki
Takano Katsuo
Anya Igwe U.
Baumeister B. William
Seiko Epson Corporation
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