Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2007-10-09

2007-10-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C438S593000

Reexamination Certificate

active

11210010

ABSTRACT:
A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.

REFERENCES:
patent: 2002/0179566 (2002-12-01), Park
patent: 2003/0207535 (2003-11-01), Kutsunai et al.
patent: 11-074488 (1999-03-01), None
patent: 2000-101042 (2000-04-01), None
patent: 2002-368200 (2002-12-01), None
patent: 2003-243628 (2003-08-01), None
patent: 2004-221241 (2004-08-01), None
Communication from Japanese Patent Office regarding counterpart application.

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