Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-10-09
2007-10-09
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S344000, C257S351000
Reexamination Certificate
active
09435154
ABSTRACT:
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.
REFERENCES:
patent: 3933529 (1976-01-01), Goser
patent: 4394182 (1983-07-01), Maddox, III
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5217910 (1993-06-01), Shimizu et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5254490 (1993-10-01), Kondo
patent: 5323042 (1994-06-01), Matsumoto
patent: 5358879 (1994-10-01), Brady et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5401982 (1995-03-01), King et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5528397 (1996-06-01), Zavracky et al.
patent: 5532176 (1996-07-01), Katada et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5705424 (1998-01-01), Zavracky et al.
patent: 5719588 (1998-02-01), Johnson
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 5742363 (1998-04-01), Bae
patent: 5764206 (1998-06-01), Koyama et al.
patent: 5830787 (1998-11-01), Kim
patent: 5912492 (1999-06-01), Chang et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5949107 (1999-09-01), Zhang
patent: 5962872 (1999-10-01), Zhang et al.
patent: 5965919 (1999-10-01), Yoo
patent: 6001714 (1999-12-01), Nakajima et al.
patent: 6008869 (1999-12-01), Oana et al.
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6049092 (2000-04-01), Konuma et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6096585 (2000-08-01), Fukuda et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6133074 (2000-10-01), Ishida et al.
patent: 6140667 (2000-10-01), Yamazaki et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6166396 (2000-12-01), Yamazaki
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6180957 (2001-01-01), Miyasaka et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6222238 (2001-04-01), Chang et al.
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6507069 (2003-01-01), Zhang et al.
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6541294 (2003-04-01), Yamazaki et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 6670641 (2003-12-01), Fukuda et al.
patent: 6773971 (2004-08-01), Zhang et al.
patent: 6867431 (2005-03-01), Konuma et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 2003/0138985 (2003-07-01), Rhodes
patent: 2005/0104068 (2005-05-01), Yamazaki
patent: 2005/0110016 (2005-05-01), Yamazaki
patent: 2006/0081931 (2006-04-01), Yamazaki et al.
patent: 0 583 370 (1994-03-01), None
patent: 0 588 370 (1994-03-01), None
patent: 0 589 478 (1994-03-01), None
patent: 0 738 012 (1996-10-01), None
patent: 60-127761 (1985-07-01), None
patent: 04-165629 (1992-06-01), None
patent: 04-258160 (1992-09-01), None
patent: 4-369271 (1992-12-01), None
patent: 5-102483 (1993-04-01), None
patent: 06-148685 (1994-05-01), None
patent: 06-260645 (1994-09-01), None
patent: 06-260646 (1994-09-01), None
patent: 7-130652 (1995-05-01), None
patent: 07-235680 (1995-09-01), None
patent: 8-078329 (1996-03-01), None
patent: 08-264784 (1996-10-01), None
patent: 08-274336 (1996-10-01), None
patent: 9-116167 (1997-05-01), None
patent: 09-191111 (1997-07-01), None
patent: 09-293600 (1997-11-01), None
patent: 10-065181 (1998-03-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-92576 (1998-04-01), None
patent: 10-104659 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-163498 (1998-06-01), None
patent: 10-189979 (1998-07-01), None
patent: 10-233511 (1998-09-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: WO90/13148 (1990-11-01), None
Schenk, H. et al, “Polymers for Light Emitting Diodes,” EuroDisplay '99,Proceedings of the 19th International Display Research Conference, Sep. 6-9, 1999, Berlin, Germany, pp. 33-37.
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance,”IEDM Technical Digest '97, International Electron Devices Meeting, Dec. 7-10, 1997, Washington D.C., pp. 523-526.
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,”J. Mater Chem.,vol. 6, No. 4, pp. 671-673, 1996.
Yoshida, T. et al, “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,”SID 97 Digest, pp. 841-844, 1997.
Furue, H. et al, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,”SID 98 Digest, pp. 782-785, 1998.
English abstract re Japanese patent application No. 7-130652, published May 19, 1995.
English abstract re Japanese patent application No. 8-078329, published Mar. 22, 1996.
English abstract re Japanese patent application No. 10-092576, published Apr. 10, 1998.
English abstract re Japanese patent application No. 10-135468, published May 22, 1998.
English abstract re Japanese patent application No. 10-135469, published May 22, 1998.
English abstract re Japanese patent application No. 10-247735, published Sep. 14, 1998.
Pending U.S. Appl. No. 09/432,662 to Yamazaki et al, filed Nov. 8, 1999, including specification, claims, drawings and PTO filing receipt.
Terada, et al, “Half-V Switching Mode FLCD, ” Proceedings of the 46th Applied Physics Association Lectures, 28p-V-8, p. 1316, Mar. 1999.
Yoshihara, T. et al, “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” EKISHO, vol. 3, No. 3, pp. 190-194, 1999.
Pending U.S. Appl. No. 09/432,662 to Yamazaki et al filed Nov. 3, 1999, including specification, claims, abstract, drawings and PTO filing receipt.
Pending U.S. Appl. No. 09/441,025 to Nakajima et al filed Nov. 16, 1999, including specification, claims, abstract, drawings and PTO filing receipt.
English Abstract of JP 10-92576.
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, pp. 751-758, May (1988).
European Patent Office search report for application No. EP 99 12 2785.1, dated Nov. 21, 2000.
Adachi Hiroki
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Nadav Ori
Semiconductor Energy Laboratory Co,. Ltd.
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