Ferroelectric layer with domains stabilized by strain

Details Ferroelectric layer with domains stabilized by strain Ferroelectric layer with domains stabilized by strain

2011-01-11

2011-01-11

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C257SE21663, C257SE27104

Reexamination Certificate

active

07867786

ABSTRACT:
The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.

REFERENCES:
patent: 6747357 (2004-06-01), Lee et al.
patent: 2007/0031590 (2007-02-01), Baniecki et al.
patent: 2007/0152253 (2007-07-01), Lee et al.

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