Ferroelectric information optical storage device with self biasi

Details Ferroelectric information optical storage device with self biasi Ferroelectric information optical storage device with self biasi

1976-05-07

1977-10-25

Hecker, Stuart N.

Communications: electrical

Digital comparator systems

340173LT, 340173LM, G11B 702, G11B 902

Patent

active

040558380

ABSTRACT:
For amplifying the photosensitivity of a ferroelectric crystal in which information is to be stored, an external field applied to the crystal is created by means of a heavily doped, reduced photocell crystal illuminated uniformly by radiation within the absorption band of the crystal. The photocell crystal connected to the terminals of the lightly doped, non-reduced ferroelectric crystal, of which the resistivity is very much higher than that of the photocell crystal, develops a very high voltage which relaxes with a high time constant. Such a voltage increases the variations in the birefraction of the ferroelectric crystal.

REFERENCES:
patent: 3932025 (1976-01-01), Lakatos et al.

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