Ferroelectric high Tc superconductor RF phase shifter

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – High frequency waveguides – resonators – electrical networks,...

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505700, 505701, 505866, 333161, 333 99005, H01P 118, H01P 900, H03H 1116, H01B 1202

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active

054098890

ABSTRACT:
The Ferroelectric high Tc superconductor RF Phase Shifter contains a ferroelectric medium and a film of a single crystal high Tc superconductor is used as the conductors. Between the ferroelectric medium and the input, there is a quarter-wave, dielectric or ferroelectric or the same material as used for the phase shifter, matching transformer. Between the ferroelectric medium and the output, there is a quarter-wave, dielectric, ferroelectric or the same material as used for the phase shifter, matching transformer. A bias field is connected across the top and bottom surfaces of the active ferroelectric medium. When a bias field is applied across the surfaces of the ferroelectric medium, the permittivity is reduced and as such the velocity of propagation is increased. This causes an increase in the effective electrical length of the phase shifter or a phase difference or time delay. Increasing the bias voltage increases the phase shift. The ferroelectric high temperature superconductor RF phase shifter may be embedded as a part of the monolithic integrated circuit. The ferroelectric high Tc superconductor RF phase shifter may be constructed of thin film and ferroelectric liquid crystal. The ferroelectric material is operated above its Curie temperature.

REFERENCES:
patent: 5032805 (1991-07-01), Elmer et al.
patent: 5208213 (1993-05-01), Ruby
patent: 5212463 (1993-05-01), Babbitt et al.
Das, S. N.; "Ferroelectric for Time Delay Steering of an Array"; Ferroelectrics; 1973, vol. 5; pp. 253-257.
Jackson, C. M., et al; Novel Monolithic Phase Shifter Combining Ferroelectrics and High Tc Superconductors; Microwave and Optical Tech Letters; vol. 5, No. 14, 20 Dec. 1992; pp. 722-728.

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