Ferroelectric film, method of manufacturing the same,...

Details Ferroelectric film, method of manufacturing the same,... Ferroelectric film, method of manufacturing the same,...

2007-12-04

2007-12-04

McNeil, Jennifer C. (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S702000, C428S450000

Reexamination Certificate

active

10807427

ABSTRACT:
A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3ferroelectric which includes at least four-fold coordinated Si4+or Ge4+in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

REFERENCES:
patent: 5378382 (1995-01-01), Nishimura et al.
patent: 1 039 525 (2000-09-01), None
U.S. Appl. No. 10/807,357, filed Mar. 24, 2004, Hamada et al.

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