Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-06-06
2006-06-06
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000
Reexamination Certificate
active
07056750
ABSTRACT:
A method of manufacturing a ferroelectric film including: forming a ferroelectric initial nucleus layer by using a solution of a first ferroelectric material and electrodepositing the first ferroelectric material on an electrode by hydrothermal electrodeposition; electrically charging particles of a second ferroelectric material; forming a ferroelectric material film by electrodepositing the electrically-charged particles of the second ferroelectric material on the ferroelectric initial nucleus layer by electrophoretic deposition; and subjecting the ferroelectric material film to a heat treatment.
REFERENCES:
patent: 2003/0059959 (2003-03-01), Hong
Seiko Epson Corporation
Tsai H. Jey
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