Ferroelectric film, method of manufacturing ferroelectric...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S240000

Reexamination Certificate

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07056750

ABSTRACT:
A method of manufacturing a ferroelectric film including: forming a ferroelectric initial nucleus layer by using a solution of a first ferroelectric material and electrodepositing the first ferroelectric material on an electrode by hydrothermal electrodeposition; electrically charging particles of a second ferroelectric material; forming a ferroelectric material film by electrodepositing the electrically-charged particles of the second ferroelectric material on the ferroelectric initial nucleus layer by electrophoretic deposition; and subjecting the ferroelectric material film to a heat treatment.

REFERENCES:
patent: 2003/0059959 (2003-03-01), Hong

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