Ferroelectric film, ferroelectric capacitor, ferroelectric...

Details Ferroelectric film, ferroelectric capacitor, ferroelectric... Ferroelectric film, ferroelectric capacitor, ferroelectric...

2008-05-13

2008-05-13

Zimmerman, John J. (Department: 1794)

Stock material or miscellaneous articles

Composite

Of inorganic material

C252S06290R, C252S06290R, C257S295000, C428S697000, C428S701000

Reexamination Certificate

active

11286286

ABSTRACT:
A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

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