Ferroelectric film, ferroelectric capacitor, ferroelectric...

Details Ferroelectric film, ferroelectric capacitor, ferroelectric... Ferroelectric film, ferroelectric capacitor, ferroelectric...

2007-08-14

2007-08-14

McNeil, Jennifer (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S697000, C428S701000, C252S06290R, C257S295000

Reexamination Certificate

active

10690021

ABSTRACT:
A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

REFERENCES:
patent: 3681226 (1972-08-01), Vogel
patent: 4051465 (1977-09-01), Brody
patent: 5164882 (1992-11-01), Kanai et al.
patent: 5279996 (1994-01-01), Hase et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5579258 (1996-11-01), Adachi
patent: 5625529 (1997-04-01), Lee et al.
patent: 5858451 (1999-01-01), Boyle
patent: 6465260 (2002-10-01), Hong et al.
patent: 6548342 (2003-04-01), Suzuki et al.
patent: 6559003 (2003-05-01), Hartner et al.
patent: 6624462 (2003-09-01), Kohara et al.
patent: 7008669 (2006-03-01), Natori et al.
patent: 2002/0009612 (2002-01-01), Ramesh et al.
patent: 2004/0136891 (2004-07-01), Kuima et al.
patent: 1301992 (2001-07-01), None
patent: 1303128 (2001-07-01), None
patent: 0 238 241 (1987-09-01), None
patent: 1 031 545 (2000-08-01), None
patent: 1 071 121 (2001-01-01), None
patent: 1 078 998 (2001-02-01), None
patent: A 62-241826 (1987-10-01), None
patent: A 1-148750 (1989-06-01), None
patent: A 1-225304 (1989-09-01), None
patent: A 4-37076 (1992-02-01), None
patent: A 6/150716 (1994-05-01), None
patent: A 8-335676 (1996-12-01), None
patent: A 9-116107 (1997-05-01), None
patent: A 11-209173 (1999-08-01), None
patent: A 2000-114484 (2000-04-01), None
patent: A 2000-236075 (2000-08-01), None
patent: A 2000-299512 (2000-10-01), None
patent: A 2000-319065 (2000-11-01), None
patent: A 2001-19432 (2001-01-01), None
patent: A-2001-36030 (2001-02-01), None
patent: A 2001-80995 (2001-03-01), None
patent: A 2003-204088 (2003-07-01), None
patent: A-2001-4363 (2001-01-01), None
patent: WO 98/08255 (1998-02-01), None
patent: WO 03/017479 (2002-02-01), None
patent: WO 02/32809 (2002-04-01), None
patent: WO 2002/102712 (2002-12-01), None
Pintilie et al. “Enhancement of the Photoconductive Properties of PBS Films Deposited on Ferroelectric Substrates”, Materials Science and Engineering B44 (1997) 292-296.
U.S. Appl. No. 10/807,278, filed Mar. 24, 2004, Kijima et al.
Ryu et al., “Effect of Heating Rate on the Sintering Behavior and the Piezoelectric Properties of Lead Zirconate Titanate Ceramics,” J. Am Ceram. Soc., 84, pp. 902-904, 2001.
Bellaiche et al., “Intrinsic Piezoelectric Response in Perovskite Alloys: PMN-PT versus PZT,” Physical Review Letters, vol. 83, No. 7, pp. 1347-1350, Aug. 16, 1999.
Miyazawa et al., “Electronic States of Perovskite-Type Oxides and Ferroelectricity,” Jpn. J. Appl. Phys., vol. 39, pp. 5679-5682, 2000.
Kijima et al., “New Development of Ferro-electric Material for FeRAM,” Abstracts of the 49thMeeting of the Japan Society of Applied Physics and Related Societies, 2002.
European Search Report, mailed Apr. 25, 2007.

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