Ferroelectric element and method for manufacturing the same

Details Ferroelectric element and method for manufacturing the same Ferroelectric element and method for manufacturing the same

2007-02-13

2007-02-13

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S250000, C438S399000

Reexamination Certificate

active

11257110

ABSTRACT:
In a ferroelectric element, the ferroelectric film is prevented from deteriorating and the interconnect film from lowering in reliability. A ferroelectric element includes a first electrode, a ferroelectric film formed on the first electrode, a second electrode formed on the ferroelectric film, a first hydrogen blocking film formed directly on a surface of the second electrode, a first insulation film formed on the first hydrogen blocking film, a first opening formed in the first hydrogen blocking film exposing a part of the second electrode, a second opening formed in the first insulation film and having a greater diameter than the diameter of the first opening, and an interconnect film connected to the second electrode through the first and second openings.

REFERENCES:
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2003/0089938 (2003-05-01), Saigoh et al.
patent: 2004/0183112 (2004-09-01), Okita
patent: 11-121704 (1999-04-01), None
patent: 2002-305288 (2002-10-01), None

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